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參數資料
型號: FDD45AN06LA0
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET 60V, 22A, 45m
中文描述: 5.2 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: TO-252AA, 3 PIN
文件頁數: 5/11頁
文件大小: 228K
代理商: FDD45AN06LA0
2004 Fairchild Semiconductor Corporation
FDD45AN06LA0 Rev. A
F
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
V
GS
= V
DS
, I
D
= 250
μ
A
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
0.9
1.0
1.1
-80
-40
0
40
80
120
160
200
1.2
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
100
1200
0.1
1
10
60
20
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
4
8
12
16
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 30V
I
D
= 25A
I
D
= 5A
WAVEFORMS IN
DESCENDING ORDER:
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相關代理商/技術參數
參數描述
FDD45AN06LA0 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDD45AN06LA0_F085 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD4685 功能描述:MOSFET -40V P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD4685_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench? MOSFET -40V, -32A, 35mΩ
FDD4685_F085 功能描述:MOSFET Trans MOS P-Ch 40V 8.4A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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