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參數資料
| 型號： | FDD5680 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel, PowerTrench⑩ MOSFET |
| 中文描述： | 38 A, 60 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | TO-252, 3 PIN |
| 文件頁數： | 3/4頁 |
| 文件大小： | 83K |
| 代理商： | FDD5680 |
F
FDD5680, Rev. C
Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
0
10
20
30
40
50
60
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
GS
= 10V
4.0V
5.0V
4.5V
3.5V
6.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
10
20
30
40
50
60
I
D
, DRAIN CURRENT (A)
V
GS
= 4.0V
10V
5.0V
7.0V
4.5V
6.0V
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 8.5A
V
GS
= 10V
0
0.01
0.02
0.03
0.04
0.05
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 4.3A
T
A
= 125
o
C
T
A
= 25
o
C
0
10
20
30
40
50
60
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
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相關代理商/技術參數 |
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|---|---|
| FDD5690 | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD5690 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FDD5690_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V N-Channel PowerTrench㈢ MOSFET |
| FDD5755 | 制造商:ELMEC 功能描述: 制造商:ELMEC 功能描述:Electronic Component |
| FDD5755C | 制造商:ELMEC 功能描述: 制造商:ELMEC 功能描述:Electronic Component |
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