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參數資料
| 型號： | FDD6530A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 21 A, 20 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 82K |
| 代理商： | FDD6530A |
July 2001
2001 Fairchild Semiconductor Corporation
FDD6630A Rev C (W)
FDD6530A
20V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
and fast switching speed.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Motor drives
Features
21 A, 20 V
R
DS(ON)
= 32 m
@ V
GS
= 4.5 V
R
DS(ON)
= 47 m
@ V
GS
= 2.5 V
Low gate charge (6.5 nC typical)
Fast switching
High performance trench technology for extremely
low R
DS(ON)
.
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation
P
D
Ratings
20
±
8
21
100
33
3.3
1.6
–55 to +175
Units
V
V
A
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
4.5
45
96
°
C/W
°
C/W
°
C/W
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
FDD6530A
FDD6530A
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
F
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|---|---|
| FDD6606 | 30V N-Channel PowerTrench MOSFET |
| FDD6612A | N-Channel, Logic Level, PowerTrench⑩ MOSFET |
| FDU6612A | 30V N-Channel PowerTrench MOSFET |
| FDD6612 | N-Channel, Logic Level, PowerTrench⑩ MOSFET |
| FDD6630A | N-Channel PowerTrench⑩ MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6530A_Q | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6606 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6606_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6612 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrench? MOSFET |
| FDD6612A | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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