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參數資料
| 型號： | FDD6612A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel, Logic Level, PowerTrench⑩ MOSFET |
| 中文描述： | 9.5 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 4/6頁 |
| 文件大小： | 122K |
| 代理商： | FDD6612A |
FDD6612A/FDU6612A Rev. E(W)
Typical Characteristics
0
10
20
30
40
50
60
0
1
2
3
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
V
GS
= 10V
4.5V
3.5V
3.0V
6.0V
4.0V
5.0V
0.8
1
1.2
1.4
1.6
1.8
2
0
10
20
30
40
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.5V
4.5V
5.0V
10V
4.0V
6.0V
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 9.5A
V
GS
= 10V
0.01
0.02
0.03
0.04
0.05
0.06
2
4
8
10
V
GS
, GATE TO SO6
R
D
,
I
D
= 5 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
0
10
20
30
40
50
60
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
3
3.5
4
4.5
5
5.5
I
D
,
T
A
= 125
o
C
-55
o
C
25
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
F
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| FDU6612A | 30V N-Channel PowerTrench MOSFET |
| FDD6612 | N-Channel, Logic Level, PowerTrench⑩ MOSFET |
| FDD6630A | N-Channel PowerTrench⑩ MOSFET |
| FDD6632 | N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6612A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 30A DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 30A, DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 30A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; No. of Pins:3 ;RoHS Compliant: Yes |
| FDD6612A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, 30A, TO-252 |
| FDD6612A_F054 | 制造商:Fairchild Semiconductor Corporation 功能描述:DPAK, SINGLE, NCH - Tape and Reel |
| FDD6612A_OLDDI | 制造商:Fairchild 功能描述:DPAK, SINGLE, NCH |
| FDD6630A | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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