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參數(shù)資料
| 型號(hào)： | FDD6635 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 35V N-Channel PowerTrench MOSFET |
| 中文描述： | 15 A, 35 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 151K |
| 代理商： | FDD6635 |
FDD6635 Rev. C(W)
www.fairchildsemi.com
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain-Source Avalanche Ratings
Drain-Source Avalanche Energy
(Single Pulse)
I
AS
Drain-Source Avalanche Current
E
AS
V
DD
= 35 V, I
D
= 15 A, L=1mH
113
mJ
15
A
Off Characteristics
(Note 2)
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V,
Δ
BV
DSS
Δ
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
I
D
= 250
μ
A
35
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
32
mV/
°
C
V
DS
= 28 V,
V
GS
=
±
20 V,
V
GS
= 0 V
V
DS
= 0 V
1
μ
A
nA
±
100
On Characteristics
V
GS(th)
Δ
V
GS(th)
Δ
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V,
I
D
= 13 A
V
GS
= 10 V,
I
D
= 15 A, T
J
=125
°
C
V
DS
= 5 V, I
D
= 15 A
I
D
= 250
μ
A
1
1.9
3
V
–5
mV/
°
C
8.2
10.2
12.4
53
10
13
16
m
Ω
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
1400
317
137
1.4
pF
pF
pF
Ω
V
DS
= 20 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV, f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g (TOT)
Total Gate Charge, V
GS
= 10V
Q
g
Total Gate Charge, V
GS
= 5V
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
11
6
28
14
26
13
3.9
5.3
20
12
45
25
36
18
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
= 20 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
V
DS
= 20 V, I
D
= 15 A
F
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| FDD6637 | 功能描述:MOSFET 35V PCH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6637 | 制造商:Fairchild Semiconductor Corporation 功能描述:P-CHANNEL POWERTRENCH MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -35V, 13A, TO-252 |
| FDD6637_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:35V P-Channel PowerTrench MOSFET |
| FDD6637_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -35V, -21A, 18m?? |
| FDD6637_F085 | 功能描述:MOSFET Trans MOS P-Ch 35V 13A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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