- 您現在的位置：買賣IC網 > PDF目錄375772 > FDD6670S (FAIRCHILD SEMICONDUCTOR CORP) 20 AMP MINIATURE POWER RELAY PDF資料下載
參數資料
| 型號： | FDD6670S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 20 AMP MINIATURE POWER RELAY |
| 中文描述： | 64 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 2/7頁 |
| 文件大小： | 97K |
| 代理商： | FDD6670S |
FDD6670S Rev E (W)
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min Typ Max Units
Single Pulse, V
DD
= 15 V, I
D
=14A
245
14
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 1 mA
I
D
= 10 mA, Referenced to 25
°
C
30
V
Breakdown Voltage Temperature
19
mV/
°
C
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
500
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 10 mA, Referenced to 25
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 13.8A, T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 15 V,
1
2
3
V
Gate Threshold Voltage
–3.3
mV/
°
C
I
D
= 13.8 A
I
D
= 11.7 A
6
9
10
9
12.5
15
m
I
D(on)
g
FS
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
On–State Drain Current
V
DS
= 5 V
I
D
= 13.8 A
50
A
Forward Transconductance
27
S
2010
526
186
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
10
10
34
18
18
55
ns
ns
ns
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
14
17
6.2
5.5
23
24
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 10 V
I
D
= 13.8 A,
Drain–Source Diode Characteristics
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
V
GS
= 0 V,
V
GS
= 0 V,
I
F
= 3.5 A,
d
iF
/d
t
= 300 A/μs
I
S
= 3.5 A
I
S
= 7 A
(Note 2)
(Note 2)
0.49
0.56
20
19.7
0.7
V
nS
nC
(Note 3)
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDD6670 | N-Channel, Logic Level, PowerTrench MOSFET |
| FDD6670AL | 30V N-Channel PowerTrench MOSFET |
| FDD6670A | N-Channel, Logic Level, PowerTrench MOSFET |
| FDD6670AS | 30V N-Channel PowerTrench SyncFET |
| FDD6670AS_NL | 30V N-Channel PowerTrench SyncFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6670S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FDD6672A | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6672A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FDD6672A_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
| FDD6676 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。