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參數資料
型號: FDD6670S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 20 AMP MINIATURE POWER RELAY
中文描述: 64 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: DPAK-3
文件頁數: 4/7頁
文件大小: 97K
代理商: FDD6670S
FDD6670S Rev E (W)
Typical Characteristics
0
10
20
30
40
50
0
0.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
1.5
2
I
D
,
4.5V
4.0V
3.5V
V
GS
= 10V
6.0V
3.0V
0.6
1
1.4
1.8
2.2
2.6
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.5V
6.0V
10V
4.0V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 13.5A
V
GS
= 10V
0.005
0.01
0.015
0.02
0.025
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 6.8A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
70
2
2.5
3
3.5
4
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
0
0.1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.2
0.3
0.4
0.5
0.6
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
相關PDF資料
PDF描述
FDD6670 N-Channel, Logic Level, PowerTrench MOSFET
FDD6670AL 30V N-Channel PowerTrench MOSFET
FDD6670A N-Channel, Logic Level, PowerTrench MOSFET
FDD6670AS 30V N-Channel PowerTrench SyncFET
FDD6670AS_NL 30V N-Channel PowerTrench SyncFET
相關代理商/技術參數
參數描述
FDD6670S 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK
FDD6672A 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6672A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK
FDD6672A_01 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET
FDD6676 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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