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參數(shù)資料
| 型號(hào)： | FDD6688S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 88 A, 30 V, 0.0051 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 181K |
| 代理商： | FDD6688S |
May 2004
2004 Fairchild Semiconductor Corporation
FDD6688 Rev C (W)
FDD6688S
30V N-Channel PowerTrench
SyncFET
General Description
The FDD6688S is designed to replace a single TO-252
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDD6688S includes
an
integrated
Schottky
monolithic SyncFET technology.
diode
using
Fairchild’s
Applications
DC/DC converter
Motor Drives
Features
88 A, 30 V.
R
DS(ON)
= 5.1 m
@ V
GS
= 10 V
R
DS(ON)
= 6.3 m
@ V
GS
= 4.5 V
Low gate charge (31 nC typical)
Fast switching
High performance trench technology for extremely
low R
DS(ON)
G
S
D
D-PAK
(TO-252)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
30
±
20
88
100
69
3.1
1.3
–55 to +150
Units
V
A
W
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Single Operation
(Note 3)
– Pulsed
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
1.8
40
96
°
C/W
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
FDD6688S
FDD6688S
Package
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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| FDD6690 | N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDD6696 | 30V N-Channel PowerTrench MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD6690 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDD6690A | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6690A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FDD6690A_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6690S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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