欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FDU6696
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 13 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封裝: IPAK-3
文件頁數: 1/5頁
文件大小: 109K
代理商: FDU6696
December 2002
2002 Fairchild Semiconductor Corporation
FDD6696/FDU6696 Rev D (W)
FDD6696/FDU6696
30V N-Channel PowerTrench
ò
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
and fast switching speed.
Applications
DC/DC converter
Motor drives
Features
50A, 30 V
R
DS(ON)
= 8.0 m
@ V
GS
= 10 V
R
DS(ON)
= 10.7 m
@ V
GS
= 4.5 V
Low gate charge (17nC typical)
Fast switching
High performance trench technology for extremely
low R
DS(ON)
G
S
D
D-PAK
(TO-252)
G D S
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Unit
s
V
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C
30
±
16
50
13
100
52
3.8
1.6
(Note 3)
A
@T
A
=25°C
Pulsed
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
(Note 1a)
(Note 1a)
Power Dissipation
(Note 3)
(Note 1a)
(Note 1b)
P
D
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +175
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
FDD6696
FDD6696
FDU6696
FDU6696
(Note 1)
2.9
40
96
°
C/W
(Note 1a)
(Note 1b)
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
F
相關PDF資料
PDF描述
FDD6N25 250V N-Channel MOSFET
FDD6N25TF 250V N-Channel MOSFET
FDD6N25TM 250V N-Channel MOSFET
FDD6N50F N-Channel MOSFET 500V, 5.5A, 1.15ヘ
FDD6N50FTF N-Channel MOSFET 500V, 5.5A, 1.15ヘ
相關代理商/技術參數
參數描述
FDU6696_Q 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDU6776A_F071 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench? MOSFET 25 V, 7.5 mΩ
FDU6780A 制造商:Fairchild Semiconductor Corporation 功能描述:
FDU6780A_F071 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench? MOSFET 25 V, 8.6 mΩ
FDU6796A 制造商:Fairchild Semiconductor Corporation 功能描述:
主站蜘蛛池模板: 原阳县| 鹤壁市| 故城县| 全椒县| 正镶白旗| 扶沟县| 云南省| 随州市| 察雅县| 昌宁县| 九台市| 凤翔县| 社旗县| 友谊县| 麟游县| 桐庐县| 德格县| 赣榆县| 阿尔山市| 临朐县| 莆田市| 宣威市| 洞头县| 黑河市| 吉安市| 天长市| 稻城县| 呼伦贝尔市| 会昌县| 红原县| 中江县| 且末县| 应城市| 锦屏县| 满城县| 呼图壁县| 敖汉旗| 同心县| 边坝县| 沾化县| 峡江县|