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參數(shù)資料
| 型號： | FDD6N25TF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 250V N-Channel MOSFET |
| 中文描述： | 4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, DPAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 686K |
| 代理商： | FDD6N25TF |
2007 Fairchild Semiconductor Corporation
FDD6N25 / FDU6N25 Rev. A
1
www.fairchildsemi.com
F
February 2007
UniFET
TM
FDD6N25 / FDU6N25
250V N-Channel MOSFET
Features
4.4A, 250V, R
DS(on)
= 1.1
@V
GS
= 10 V
Low gate charge ( typical 4.5 nC)
Low C
rss
( typical 5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
I-PAK
FDU Series
D-PAK
FDD Series
G
S
D
G
S
D
Symbol
Parameter
FDD6N25 / FDU6N25
Unit
V
DSS
I
D
Drain-Source Voltage
250
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
4.4
2.6
18
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
45
mJ
Avalanche Current
(Note 1)
4.4
A
Repetitive Avalanche Energy
(Note 1)
5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
50
0.4
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Typ
Max
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
--
2.5
°
C/W
Thermal Resistance, Junction-to-Ambient
--
110
°
C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDD6N25TM | 250V N-Channel MOSFET |
| FDD6N50F | N-Channel MOSFET 500V, 5.5A, 1.15ヘ |
| FDD6N50FTF | N-Channel MOSFET 500V, 5.5A, 1.15ヘ |
| FDD6N50FTM | N-Channel MOSFET 500V, 5.5A, 1.15ヘ |
| FDD6N50 | 500V N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD6N25TM | 功能描述:MOSFET 250V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6N50 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FDD6N50F | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 5.5A, 1.15ヘ |
| FDD6N50FTF | 功能描述:MOSFET 500V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6N50FTM | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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