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參數(shù)資料
| 型號： | FDD7N20TM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel MOSFET |
| 中文描述： | 5 A, 200 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, TO-252AB, DPAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 310K |
| 代理商： | FDD7N20TM |
tm
April 2007
UniFET
F
2007 Fairchild Semiconductor Corporation
FDD7N20 / FDU7N20 Rev. A
www.fairchildsemi.com
1
TM
FDD7N20 / FDU7N20
N-Channel MOSFET
200V, 5A, 0.69
Ω
Features
R
DS(on)
= 0.58
Ω
( Typ. ) @ V
GS
= 10V, I
D
= 2.5A
Low gate charge( Typ. 5nC )
Low Crss ( Typ. 5pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especically tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
S
I-PAK
FDU Series
G
D S
G
S
D
D-PAK
FDD Series
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
V
GSS
Parameter
Ratings
200
±30
5
3
15
62.5
5
4.3
4.5
43
0.34
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (T
C
= 25
o
C)
I
D
A
-Continuous (T
C
= 100
o
C)
I
DM
E
AS
I
AR
E
AR
dv/dt
Drain Current - Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
(T
C
= 25
o
C)
- Derate above 25
o
C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
A
mJ
A
mJ
V/ns
W
W/
o
C
o
C
P
D
Power Dissipation
T
J
, T
STG
T
L
300
o
C
Symbol
Parameter
Ratings
Units
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
2.9
o
C/W
Thermal Resistance, Junction to Ambient
110
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