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參數(shù)資料
| 型號： | FDD8586 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 20V, 35A, 5.5mOHM |
| 中文描述： | 35 A, 20 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 373K |
| 代理商： | FDD8586 |
tm
January 2007
F
2007 Fairchild Semiconductor Corporation
FDD8586/FDU8586 Rev. B
www.fairchildsemi.com
1
FDD8586/FDU8586
N-Channel PowerTrench
MOSFET
20V, 35A, 5.5m
Features
Max r
DS(on)
=
5.5m
at V
GS
= 10V, I
D
= 35A
Max r
DS(on)
=
8.5m
at V
GS
= 4.5V, I
D
= 33A
Low gate charge: Q
g(TOT)
= 34nC(Typ), V
GS
= 10V
Low gate resistance
100% Avalanche tested
RoHS compliant
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
20
±20
35
93
354
144
77
-55 to 175
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
-Continuous (Die Limited)
-Pulsed (Note 1)
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
Operating and Storage Temperature
I
D
A
E
AS
P
D
T
J
, T
STG
mJ
W
°
C
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case TO-252,TO-251
1.94
°
C/W
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in
2
copper pad area
100
°
C/W
52
°
C/W
Device Marking
FDD8586
FDU8586
Device
FDD8586
FDU8586
Package
TO-252AA
TO-251AA
Reel Size
13’’
N/A(Tube)
Tape Width
12mm
N/A
Quantity
2500 units
75 units
I-PAK
(TO-251AA)
G D S
D
G
S
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