- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375773 > FDD8796 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench㈢ MOSFET 25V, 35A, 5.7mOhm PDF資料下載
參數(shù)資料
| 型號： | FDD8796 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET 25V, 35A, 5.7mOhm |
| 中文描述： | 35 A, 25 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 310K |
| 代理商： | FDD8796 |
F
FDD8796/FDU8796 Rev. B
2
www.fairchildsemi.com
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
B
VDSS
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, V
GS
= 0V
I
D
= 250
μ
A, referenced to
25°C
25
V
7
mV/°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 20V
V
GS
= 0V T
J
= 150°C
V
GS
= ±20V
1
μ
A
250
±100
I
GSS
On Characteristics
Gate to Source Leakage Current
nA
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 250
μ
A, referenced to
25°C
V
GS
= 10V, I
D
= 35A
V
GS
= 4.5V, I
D
= 35A
V
DS
= 10V, I
D
= 35A
T
J
= 175°C
1.2
1.8
2.5
V
-6.7
mV/°C
r
DS(on)
Drain to Source On Resistance
4.5
6.0
5.7
8.0
m
6.9
9.5
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Switching Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 13V, V
GS
= 0V,
f = 1MHz
1960
455
315
1.1
2610
605
475
pF
pF
pF
f = 1MHz
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
V
DD
=13V, I
D
= 35A
V
GS
= 10V, R
GS
= 20
10
24
99
57
37
19
6
6
20
39
158
91
52
27
ns
ns
ns
ns
nC
nC
nC
nC
V
GS
= 0 to10V
V
GS
= 0 to 5V
V
DD
=13V,
I
D
= 35A,
I
g
= 1.0mA
V
SD
Source to Drain Diode Voltage
V
GS
= 0V, I
S
= 35A
V
GS
= 0V, I
S
= 15A
I
F
= 35A, di/dt = 100A/
μ
s
I
F
= 35A, di/dt = 100A/
μ
s
0.9
0.8
30
23
1.25
1.0
45
35
V
V
ns
nC
t
rr
Q
rr
Notes:
1:
Pulse time < 300
μ
s, Duty cycle = 2%.
2:
Starting T
J
= 25
°C, L = 0.3mH, I
AS
= 24.7A, V
DD
= 23V, V
GS
= 10V.
Reverse Recovery Time
Reverse Recovery Charge
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDD8870 | N-Channel PowerTrench MOSFET |
| FDU8870 | N-Channel PowerTrench MOSFET |
| FDD8880 | N-Channel PowerTrench MOSFET |
| FDDL300 | OPTOISOLATOR W/BASE 6-DIP |
| FDDL300A | High Conductance Low Leakage Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD8870 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD8870 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 0.0032OHM, 160A, TO-252AA-3 |
| FDD8870_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDD8870_F085 | 功能描述:MOSFET 30V NCH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD8870_F085_13 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 160A, 3.9m?? |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。