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參數資料
| 型號： | FDD8880 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 35 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | DPAK-3 |
| 文件頁數： | 10/11頁 |
| 文件大小： | 127K |
| 代理商： | FDD8880 |
2004 Fairchild Semiconductor Corporation
FDD8880 Rev. B1
F
PSPICE Thermal Model
REV 23 April 2004
FDD8880T
CTHERM1 TH 6 8e-4
CTHERM2 6 5 1e-3
CTHERM3 5 4 2.5e-3
CTHERM4 4 3 2.6e-3
CTHERM5 3 2 8e-3
CTHERM6 2 TL 1.5e-2
RTHERM1 TH 6 1.44e-1
RTHERM2 6 5 1.9e-1
RTHERM3 5 4 3.0e-1
RTHERM4 4 3 4.0e-1
RTHERM5 3 2 5.7e-1
RTHERM6 2 TL 5.8e-1
SABER Thermal Model
SABER thermal model FDD8880T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =8e-4
ctherm.ctherm2 6 5 =1e-3
ctherm.ctherm3 5 4 =2.5e-3
ctherm.ctherm4 4 3 =2.6e-3
ctherm.ctherm5 3 2 =8e-3
ctherm.ctherm6 2 tl =1.5e-2
rtherm.rtherm1 th 6 =1.44e-1
rtherm.rtherm2 6 5 =1.9e-1
rtherm.rtherm3 5 4 =3.0e-1
rtherm.rtherm4 4 3 =4.0e-1
rtherm.rtherm5 3 2 =5.7e-1
rtherm.rtherm6 2 tl =5.8e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
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| FDFC2P100 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD8880_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 58A, 9mヘ |
| FDD8880_F054 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD8880_G | 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-Channel PowerTrench? MOSFET |
| FDD8880_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD8882 | 功能描述:MOSFET 30V N-Channel PowerTrench? MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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