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參數資料
| 型號： | FDFS2P102 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | FETKEY P-Channel MOSFET with Schottky Diode |
| 中文描述： | 3.3 A, 20 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 4/5頁 |
| 文件大小： | 87K |
| 代理商： | FDFS2P102 |
F
FDFS2P102 Rev. E
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0
2
4
6
8
10
0
5
10
15
20
25
30
35
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 7.6A
V
DS
= 10V
20V
40V
0
400
800
1200
1600
2000
2400
0
10
20
30
40
50
60
70
80
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 10. Schottky Diode Reverse Current.
Figure 9. Schottky Diode Forward Voltage
.
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
0.2
0.5
1
2
5
10
V , FORWARD VOLTAGE (V)
I
F
25 C
J
0
5
10
15
20
0.0001
0.0002
0.0005
0.001
V , REVERSE VOLTAGE (V)
I
R
TJ
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R =135 C/W
JA
T - T = P * R JA
P(pk)
t
1
t
2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDFS2P102_Q | 功能描述:MOSFET Integrated P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS2P102A | 功能描述:MOSFET P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS2P102A_NL | 功能描述:MOSFET 20V/20V 125/200MO SO8 500A GOX, PTII RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS2P103 | 功能描述:MOSFET P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS2P103_Q | 功能描述:MOSFET P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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