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參數資料
| 型號： | FDFS2P106A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Integrated 60V P-Channel PowerTrench剖 MOSFET and Schottky Diode |
| 中文描述： | 3 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 91K |
| 代理商： | FDFS2P106A |
June 2001
FDFS2P106A
Integrated 60V P-Channel PowerTrench
MOSFET and Schottky Diode
2001 Fairchild Semiconductor Corporation
FDFS2P106A Rev B(W)
General Description
The
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
FDFS2P106A
combines
the
exceptional
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
–3.0 A, –60V R
DS(ON)
= 110 m
@ V
GS
= –10 V
R
DS(ON)
= 140 m
@ V
GS
= –4.5 V
V
F
< 0.45 V @ 1 A (T
J
= 125
°
C)
V
F
< 0.53 V @ 1 A
V
F
< 0.62 V @ 2 A
Schottky and MOSFET incorporated into single
power surface mount SO-8 package
Electrically independent Schottky and MOSFET
pinout for design flexibility
A
A
S
G
C
C
D
D
Pin 1
SO-8
8
1
7
2
6
3
5
4
A
A
S
G
C
C
D
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
MOSFET Drain-Source Voltage
V
GSS
MOSFET Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
V
RRM
Schottky Repetitive Peak Reverse Voltage
I
O
Schottky Average Forward Current
Ratings
–
60
±
20
–
3
–
10
2
1.6
1
0.9
–
55 to +150
45
1
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
°
C
V
A
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
FDFS2P106A
FDFS2P106A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDFS2P106A_Q | 功能描述:MOSFET 60V P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS2P753AZ | 功能描述:MOSFET -30V Int P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS2P753AZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ |
| FDFS2P753Z | 功能描述:MOSFET -30V -3A 115 OHM PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS6N303 | 功能描述:MOSFET N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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