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參數資料
| 型號： | FDFS6N303 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel MOSFET with Schottky Diode |
| 中文描述： | 6 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 96K |
| 代理商： | FDFS6N303 |
October 2001
FDFS6N303
N-Channel MOSFET with Schottky Diode
General Description
Features
MOSFET Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
FDFS6N303
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
Drain Current - Continuous
(Note 1a)
6
A
- Pulsed
30
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1c)
0.9
T
J
,T
STG
Schottky Diode Maximum Ratings
T
A
= 25
o
C unless otherwise noted
V
RRM
Repetitive Peak Reverse Voltage
I
O
Average Forward Current
(Note 1a)
Operating and Storage Temperature Range
-55 to 150
°C
30
V
2
A
2001 Fairchild Semiconductor Corporation FDFS6N303 Rev. D1
6 A, 30 V. R
DS(ON)
= 0.035
@ V
GS
= 10 V.
R
DS(ON)
= 0.050
@ V
GS
= 4.5 V.
V
F
< 0.28 V @ 0.1 A
V
F
< 0.42 V @ 3 A
V
F
< 0.50 V @ 6 A.
Schottky and MOSFET incorporated into single power
surface mount SO-8 package.
General purpose pinout for design flexibility.
Ideal for DC/DC converter applications.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
Fairchild Semiconductor's FETKEY technology incorporates
a high cell density MOSFET and low forward drop (0.35V)
Schottky diode into a single surface mount power package.
The MOSFET and Schottky diode are isolated inside the
package. The general purpose pinout has been chosen to
maximize flexibility and ease of use. FETKEY products are
particularly suited for switching applications such as DC/DC
buck, boost, synchronous, and non-synchronous converters
where the MOSFET is driven as low as 4.5V and fast
switching, high efficiency and small PCB footprint is
desirable.
A
C
S
A
SO-8
D
D
C
G
pin
1
FDFS
6N303
A
A
C
C
D
D
G
S
6
7
5
1
2
3
4
8
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDFS6N303_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET with Schottky Diode |
| FDFS6N548 | 功能描述:MOSFET 30V Integrated N-Ch PT MOSFET-Schtky Dio RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS6N754 | 功能描述:MOSFET 30V 4A 56OHM NCH POWER TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG.1B.110.CZZ | 功能描述:環形推拉式連接器 STRAIGHT PLUG LONG VERSION RoHS:否 制造商:Hirose Connector 產品類型:Connectors 系列:HR10 觸點類型:Socket (Female) 外殼類型:Receptacle 觸點數量:4 外殼大小:7 安裝風格:Panel 端接類型:Solder 電流額定值:2 A |
| FDG.1B.155.LNN | 功能描述:環形推拉式連接器 STRAIGHT PLUG LONG VERSION RoHS:否 制造商:Hirose Connector 產品類型:Connectors 系列:HR10 觸點類型:Socket (Female) 外殼類型:Receptacle 觸點數量:4 外殼大小:7 安裝風格:Panel 端接類型:Solder 電流額定值:2 A |
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