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參數資料
| 型號： | FDFS6N303 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel MOSFET with Schottky Diode |
| 中文描述： | 6 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 2/5頁 |
| 文件大小： | 96K |
| 代理商： | FDFS6N303 |
Electrical Characteristics
(T
A
= 25
o
C unless otherwise noted )
MOSFET ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Typ
Max
Units
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 24 V, V
GS
= 0 V
30
V
Zero Gate Voltage Drain Current
1
μA
T
J
=125°C
20
μA
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 6 A
V
GS
= 4.5 V, I
D
= 4.8 A
V
DS
= 10 V, I
D
= 6 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
100
nA
Gate - Body Leakage, Reverse
-100
nA
Gate Threshold Voltage
1
1.7
3
V
Static Drain-Source On-Resistance
0.025
0.035
0.043
0.05
g
FS
I
D(ON)
C
iss
C
oss
C
rss
Q
g
t
D(on)
t
r
t
D(off)
t
f
MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Forward Transconductance
12
S
On-State Drain Current
15
A
Input Capacitance
350
pF
Output Capacitance
220
pF
Reverse Transfer Capacitance
80
pF
Total Gate Charge
V
DS
= 15 V, I
D
= 6 A, V
GS
= 10 V
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
12
17
nC
Turn - On Delay Time
7.5
15
ns
Turn - On Rise Time
12
25
ns
Turn - Off Delay Time
13
25
ns
Turn - Off Fall Time
6
15
ns
I
S
V
SD
SCHOTTKY DIODE CHARACTERISTICS
Maximum Continuous Drain-Source Diode Forward Current
1.3
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
0.8
1.2
V
B
V
I
R
V
F
Reverse Breakdown Voltage
I
R
= 1 mA
V
R
= 30 V
I
F
= 0.1 A
I
F
= 3 A
I
F
= 6 A
30
V
Reverse Leakage
0.5
mA
Forward Voltage
280
mV
420
500
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by the user's board design.
2 Scale 1 : 1 on letter size paper
FDFS6N303 Rev. D1
c. 135
O
C/W on a 0.003 in
2
pad of 2oz copper.
b. 125
O
C/W on a 0.02 in
2
pad of 2oz copper.
a. 78
O
C/W on a 0.5 in
2
pad of 2oz copper.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDFS6N303_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET with Schottky Diode |
| FDFS6N548 | 功能描述:MOSFET 30V Integrated N-Ch PT MOSFET-Schtky Dio RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS6N754 | 功能描述:MOSFET 30V 4A 56OHM NCH POWER TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG.1B.110.CZZ | 功能描述:環形推拉式連接器 STRAIGHT PLUG LONG VERSION RoHS:否 制造商:Hirose Connector 產品類型:Connectors 系列:HR10 觸點類型:Socket (Female) 外殼類型:Receptacle 觸點數量:4 外殼大小:7 安裝風格:Panel 端接類型:Solder 電流額定值:2 A |
| FDG.1B.155.LNN | 功能描述:環形推拉式連接器 STRAIGHT PLUG LONG VERSION RoHS:否 制造商:Hirose Connector 產品類型:Connectors 系列:HR10 觸點類型:Socket (Female) 外殼類型:Receptacle 觸點數量:4 外殼大小:7 安裝風格:Panel 端接類型:Solder 電流額定值:2 A |
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