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參數資料
| 型號： | FDG311N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 1900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 89K |
| 代理商： | FDG311N |
F
FDG311N Rev. D
FDG311N
N-Channel 2.5V Specified PowerTrench
MOSFET
February 2000
2000 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25 C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
20
±
8
1.9
6
0.75
0.48
V
V
A
- Continuous
- Pulsed
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
W
P
D
(Note 1b)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
260
°
C/W
Package Marking and Ordering Information
Device Marking
.
11
Device
FDG311N
Reel Size
7
Tape Width
8mm
Quantity
3000 units
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance. These devices are
well suited for portable electronics applications.
Applications
Load switch
Power management
DC/DC converter
Features
1.9 A, 20 V. R
DS(ON)
= 0.115
@ V
GS
= 4.5 V
R
DS(ON)
= 0.150
@ V
GS
= 2.5 V.
Low gate charge (3nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
Compact industry standard SC70-6 surface mount
package.
SC70-6
D
S
DG
D
D
3
3
5
6
4
1
2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDG311N | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 20V, 1.9A, SC-70 |
| FDG311N_Q | 功能描述:MOSFET SC70-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG312P | 功能描述:MOSFET SC70-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG312P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDG313N | 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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