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參數資料
| 型號： | FDG314P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Digital FET, P-Channel |
| 中文描述： | 650 mA, 25 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數： | 2/5頁 |
| 文件大小： | 84K |
| 代理商： | FDG314P |
F
FDG314P Rev.C
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-25
V
-19
mV/
°
C
V
DS
= -20 V, V
GS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
-1
μ
A
nA
-100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-0.65
-0.72
-1.5
V
Gate Threshold Voltage
2
mV/
°
C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= -4.5 V, I
D
= -0.5 A
V
GS
= -4.5 V, I
D
= -0.5 A @ 125
°
C
V
GS
= -2.7 V, I
D
= -0.25 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -4.5 V, I
D
= -0.5 A
0.77
1.08
1.06
1.1
1.8
1.5
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
-1
A
S
0.9
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
63
34
10
pF
pF
pF
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
7
8
55
35
1.1
0.32
0.25
20
20
110
70
1.5
ns
ns
ns
ns
nC
nC
nC
V
DD
= -6 V, I
D
= -0.5 A,
V
GS
= -4.5 V, R
GEN
= 50
V
DS
= -5 V, I
D
= -0.25 A,
V
GS
= -4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward
Voltage
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
-0.42
A
V
GS
= 0 V, I
S
= -0.42 A
(Note 2)
-0.85
-1.2
V
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 170
°
C/W when mounted on a 1 in
2
pad of 2oz copper.
b) 260
°
C/W when mounted on a minimum mounting pad.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDG314P_Q | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG315 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench MOSFET |
| FDG315N | 功能描述:MOSFET SC70-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG316P | 功能描述:MOSFET SC70-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG318P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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