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參數資料
| 型號： | FDG326 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | CAP CER 150PF 630VDC U2J 1206 |
| 中文描述： | P溝道MOSFET的1.8指定的PowerTrench |
| 文件頁數： | 1/5頁 |
| 文件大小： | 69K |
| 代理商： | FDG326 |
January 2001
2001 Fairchild Semiconductor Corporation
FDG326P Rev D(W)
FDG326P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
MOSFET
uses
Applications
Battery management
Load switch
Features
–1.5 A, –20 V.
R
DS(ON)
= 140 m
@ V
GS
= –4.5 V
R
DS(ON)
= 180 m
@ V
GS
= –2.5 V
R
DS(ON)
= 250 m
@ V
GS
= –1.8 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Compact industry standard SC70-6 surface mount
package
SC70-6
3
5
6
4
1
2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
–20
±
8
–1.5
–6
0.75
0.48
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Note 1b)
260
°
C/W
Package Marking and Ordering Information
Device Marking
Device
.26
FDG326P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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|---|---|
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| FDG327N | CAP CER 330PF 630VDC U2J 1206 |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDG326P | 功能描述:MOSFET SC70-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG326P_Q | 功能描述:MOSFET SC70-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG327N | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG327N_Q | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG327NZ | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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