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參數(shù)資料
| 型號(hào)： | FDG315 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | N溝道MOSFET的邏輯電平的PowerTrench |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 81K |
| 代理商： | FDG315 |
F
FDG315N Rev. C
Typical Characteristics
0
2
4
6
8
10
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
V
GS
= 10V
3.0V
4.5V
3.5V
4.0V
5.0V
6.0V
0.8
1
1.2
1.4
1.6
1.8
2
0
2
4
6
8
10
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.5V
10V
4.0V
5.0V
4.5V
6.0V
8.0V
0
2
4
6
8
10
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
0.2
0.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.6
0.8
1
1.2
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 1A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 2A
V
GS
= 10V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDG315N | CAP CER 100PF 630VDC U2J 1206 |
| FDG316P | CAP CER 1000PF 630VDC U2J 1206 |
| FDG326 | CAP CER 150PF 630VDC U2J 1206 |
| FDG326P | CAP CER 220PF 630VDC U2J 1206 |
| FDG327NZ | CAP CER 680PF 630VDC U2J 1206 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG315N | 功能描述:MOSFET SC70-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG316P | 功能描述:MOSFET SC70-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG318P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG326 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET |
| FDG326P | 功能描述:MOSFET SC70-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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