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參數資料
| 型號： | FDG6318PZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual P-Channel, Digital FET |
| 中文描述： | 500 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數： | 2/9頁 |
| 文件大小： | 217K |
| 代理商： | FDG6318PZ |
2003 Fairchild Semiconductor Corporation
FDG6318PZ Rev. B
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate to Source Leakage Current
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
r
DS(ON)
Drain to Source On Resistance
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at -4.5V
Q
g(-2.5)
Total Gate Charge at -2.5V
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= -4.5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Voltage
t
rr
Reverse Recovery Time
Q
RR
Reverse Recovered Charge
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the center drain pad. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by user’s board design. R
θ
JA
=
415
o
C/W when mounted on a 1inch
2
copper pad.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
D
= -250
μ
A, V
GS
= 0V
V
GS
=
16V , V
GS
= 0V
V
GS
=
±
12V , V
GS
= 0V
-20
-
-
-
-
-
-
V
μ
A
μ
A
-3
±
10
V
GS
= V
DS
, I
D
= -250
μ
A
I
D
= -0.5A, V
GS
= -4.5V
I
D
= -0.4A, V
GS
= -2.5V
-0.65
-
-
-0.9
5
8
0
910
-1.5
7
8
0
1200
V
m
V
DS
= -10V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
85.4
24.9
8.83
1.08
0.67
0.21
0.33
-
-
-
pF
pF
pF
nC
nC
nC
nC
V
GS
= 0V to -4.5V
V
GS
= 0V to -2.5V
V
DD
= -10V
I
D
= -0.5A
I
g
= 1.0mA
1.62
1.0
-
-
V
DD
= -10V, I
D
= -0.5A
V
GS
= -4.5V, R
GS
= 120
-
-
-
-
-
-
-
35
-
-
-
-
96
ns
ns
ns
ns
ns
ns
10
13
40
24
-
I
SD
= -0.5A
I
SD
= -0.5A, dI
SD
/dt = 100A/
μ
s
I
SD
= -0.5A, dI
SD
/dt = 100A/
μ
s
-
-
-
-0.9
-
-
-1.2
22
16
V
ns
nC
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