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參數資料
| 型號： | FDG6335N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Case Size: 3.2x6.0 mm; Packaging: Tape & Reel |
| 中文描述： | 700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 66K |
| 代理商： | FDG6335N |
October 2001
2001 Fairchild Semiconductor Corporation
FDG6335N Rev C (W)
FDG6335N
20V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low R
DS(ON)
and gate charge (Q
G
) in a small package.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Power management
Loadswitch
Features
0.7 A, 20 V.
R
DS(ON)
= 300 m
@ V
GS
= 4.5 V
R
DS(ON)
= 400 m
@ V
GS
= 2.5 V
Low gate charge (1.1 nC typical)
High performance trench technology for extremely
low R
DS(ON)
Compact industry standard SC70-6 surface mount
package
S
G
D
D
G
S
Pin 1
SC70-6
G
D
S
Dual N-Channel
1 or 4
2 or 5
3 or 6
6 or 3
5 or 2
4 or 1
S
D
G
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
0.7
2.1
0.3
–55 to +150
Units
V
V
A
(Note 1)
(Note 1)
W
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°
C/W
Package Marking and Ordering Information
Device Marking
Device
.35
FDG6335N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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PDF描述 |
|---|---|
| FDG6342L | Integrated Load Switch |
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| FDG8850NZ | Dual N-Channel PowerTrench㈢ MOSFET |
| FDG901D | 20 AMP MINIATURE POWER RELAY |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDG6335N_Q | 功能描述:MOSFET FDG6335N RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6342L | 功能描述:電源開關 IC - 配電 Integ Load Switch RoHS:否 制造商:Exar 輸出端數量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| FDG8842CZ | 功能描述:MOSFET Q1:30V/Q2: -25V Cmpl PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG8850NZ | 功能描述:MOSFET 30V Dual N-CH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG901 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Slew Rate Control Driver IC for P-Channel MOSFETs |
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