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參數資料
| 型號： | FDG8842CZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Complementary PowerTrench㈢ MOSFET |
| 中文描述： | 750 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SC-70, 6 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 458K |
| 代理商： | FDG8842CZ |
tm
April 2007
F
M
2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
www.fairchildsemi.com
1
FDG8842CZ
Complementary PowerTrench
MOSFET
Q1:30V,0.75A,0.4
Ω
; Q2:–25V,–0.41A,1.1
Ω
Features
Q1: N-Channel
Max r
DS(on)
= 0.4
Ω
at V
GS
= 4.5V, I
D
= 0.75A
Max r
DS(on)
= 0.5
Ω
at V
GS
= 2.7V, I
D
= 0.67A
Q2: P-Channel
Max r
DS(on)
= 1.1
Ω
at V
GS
= –4.5V, I
D
= –0.41A
Max r
DS(on)
= 1.5
Ω
at V
GS
= –2.7V, I
D
= –0.25A
Very low level gate drive requirements allowing direct
operation in 3V circuits(V
GS(th)
<1.5V)
Very small package outline SC70-6
RoHS Compliant
General Description
These N & P-Channel logic level enhancement mode field effect
transistors are produced using Fairchild’s proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage applica-
tions as a replacement for bipolar digital transistors and small
signal MOSFETs. Since bias resistors are not required, this dual
digital FET can replace several different digital transistors, with
different bias resistor values.
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Q1
30
±12
0.75
2.2
Q2
–25
–8
–0.41
–1.2
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
I
D
A
P
D
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
0.36
0.30
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient Single operation (Note 1a)
350
°C/W
Thermal Resistance, Junction to Ambient Single operation (Note 1b)
415
Device Marking
.42
Device
FDG8842CZ
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
S1
G1
D2
D1
G2
S2
S1
S2
G2
D1
D2
G1
Pin 1
SC70-6
Q1
Q2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDG8850NZ | 功能描述:MOSFET 30V Dual N-CH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG901 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Slew Rate Control Driver IC for P-Channel MOSFETs |
| FDG901D | 功能描述:開關變換器、穩壓器與控制器 Control Driver IC P-Ch Slew Rate RoHS:否 制造商:Texas Instruments 輸出電壓:1.2 V to 10 V 輸出電流:300 mA 輸出功率: 輸入電壓:3 V to 17 V 開關頻率:1 MHz 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:WSON-8 封裝:Reel |
| FDG901D_Q | 功能描述:電源開關 IC - 配電 Control Driver IC P-Ch Slew Rate RoHS:否 制造商:Exar 輸出端數量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| FDG910D | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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