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參數(shù)資料
| 型號(hào)： | FDI3652 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 100V, 61A, 16mз |
| 中文描述： | 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | TO-262AA, 3 PIN |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 272K |
| 代理商： | FDI3652 |
2002 Fairchild Semiconductor Corporation
FDB3652 / FDP3652 / FDI3652 Rev. B
F
Typical Characteristics
T
C
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
25
50
75
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.02
0.01
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
100
1000
50
I
D
,
t, PULSE WIDTH (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
T
C
= 25
o
C
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