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參數資料
| 型號： | FDI8442 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET |
| 中文描述： | 23 A, 40 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 2/7頁 |
| 文件大小： | 316K |
| 代理商： | FDI8442 |
F
FDI8442 Rev
. A
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 32V
V
GS
= 0V
V
GS
=
±
20V
40
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
J
= 150°C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
V
GS(th)
Gate to Source Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 80A, V
GS
= 10V
I
D
= 80A, V
GS
= 10V,
T
J
= 175°C
2
-
2.9
2.3
4
V
r
DS(on
)
Drain to Source On Resistance
2.9
m
Ω
-
3.9
5.0
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
12200
1040
640
1.0
181
23
49
26
41
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DD
= 20V
I
D
= 80A
I
g
= 1mA
235
30
-
-
-
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
40
±20
80
23
See Figure 4
720
254
1.7
-55 to +175
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T
C
<158
o
C, V
GS
= 10V)
Drain Current Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 62
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
Derate above 25
o
C
T
J
, T
STG
Operating and Storage Temperature
I
D
A
E
AS
mJ
W
W/
o
C
o
C
P
D
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient (Note 2)
0.59
62
o
C/W
o
C/W
Device Marking
FDI8442
Device
FDI8442
Package
TO-262
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
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相關代理商/技術參數 |
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| FDI9406_F085 | 功能描述:MOSFET 40V, 110A, 2.2m Ohm NChannel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDIPD-MD HARDWARE | 制造商: 功能描述: 制造商:undefined 功能描述: |
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| FDJ1027P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDJ1027P_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET |
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