- 您現在的位置：買賣IC網 > PDF目錄375775 > FDJ1032C (FAIRCHILD SEMICONDUCTOR CORP) Plug-In Relay; Contacts:DPDT; Contact Carry Current:12A; Coil Voltage AC Max:120V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal; Relay Options:Hermetically Sealed; Coil Resistance:9100ohm; Contact Carrying Power:1.2W RoHS Compliant: Yes PDF資料下載
參數資料
| 型號： | FDJ1032C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Plug-In Relay; Contacts:DPDT; Contact Carry Current:12A; Coil Voltage AC Max:120V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal; Relay Options:Hermetically Sealed; Coil Resistance:9100ohm; Contact Carrying Power:1.2W RoHS Compliant: Yes |
| 中文描述： | 3.2 A, 20 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | FLMP, SC-75, 6 PIN |
| 文件頁數： | 4/9頁 |
| 文件大小： | 650K |
| 代理商： | FDJ1032C |
4
www.fairchildsemi.com
FDJ1032C Rev. B1(W)
F
Typical Characteristics : Q1
0
2
4
6
8
10
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
=-4.5V
-3.0V
-3.5V
-1.8V
-2.5V
-2.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
2
4
6
8
10
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
=-1.8V
-3.0V
-3.5V
-4.5V
-4.0V
-2.5V
-2.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
°
C)
R
D
,
I
D
= -2.8A
V
GS
= -4.5V
0.08
0.14
0.2
0.26
0.32
0.38
0.44
0.5
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -1.4A
T
A
= 125
°
C
T
A
= 25
°
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
0.5
1
1.5
2
2.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
°
C
25
°
C
125
°
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
=0V
T
A
= 125
°
C
25
°
C
-55
°
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
相關PDF資料 |
PDF描述 |
|---|---|
| FDJ127P | P-Channel -1.8 Vgs Specified PowerTrench MOSFET |
| FDJ128N | N-Channel 2.5 Vgs Specified PowerTrench MOSFET |
| FDJ129 | P-Channel -2.5 Vgs Specified PowerTrench MOSFET |
| FDJ129P | P-Channel -2.5 Vgs Specified PowerTrench MOSFET |
| FDLL300A | High Conductance Low Leakage Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDJ1032C_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Complementary PowerTrench MOSFET |
| FDJ127P | 功能描述:MOSFET P-Ch -1.8 Vgs Spec PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDJ128N | 功能描述:MOSFET N-Ch PowerTrench 2.5Vgs Specified RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDJ128N_F077 | 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDJ129 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel -2.5 Vgs Specified PowerTrench MOSFET |
發布緊急采購，3分鐘左右您將得到回復。