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參數資料
| 型號： | FDMA430NZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Single N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 5 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2 X 2 MM, ROHS COMPLIANT, MO-229, MICROFET-6 |
| 文件頁數： | 4/7頁 |
| 文件大小： | 559K |
| 代理商： | FDMA430NZ |
F
FDMA430NZ Rev B
www.fairchildsemi.com
4
Figure 7.
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
= 10V
V
DS
= 20V
V
DS
= 15V
I
D
=5.0A
V
G
,
Q
g
,GATE CHARGE (nC)
Gate Charge Characteristics
Figure 8.
0.1
1
10
10
100
1000
f = 1MHZ
V
GS
= 0V
C
iss
C
oss
C
rss
C
V
DS
,DRAIN TO SOURCE VOLTAGE(V)
30
Capacitance vs Drain to Source Voltage
Figure 9.
0.1
1
10
0.01
0.1
1
10
100
DC
10s
1s
100ms
10ms
1ms
100us
10us
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE
T
J
=MAX RATED
T
A
=
25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY R
DS(ON)
50
Safe Operating Area
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
25
50
T
A
, AMBIENT TEMPERATURE
(
O
C
)
75
100
125
150
0
1
2
3
4
5
I
D
,
V
GS
=4.5V
V
GS
=2.5V
R
θ
JA
=145
O
C/W
Figure 11. Single Pulse Maximum Power Dissipation
10
-4
10
-3
10
-2
-1
10
0
10
1
10
2
10
3
1
10
100
V
GS
= 10V
SINGLE PULSE
t, PULSE WIDTH (s)
P
(
,
(
W
)
0.5
200
T
A
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
I25
=
150
--------------------
–
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMA430NZ | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDMA430NZ_0609 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel 2.5V Specified PowerTrench㈢ MOSFET 30V, 5.0A, 40mз |
| FDMA430NZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel 2.5V Specified PowerTrench㈢ MOSFET30V, 5.0A, 40mヘ |
| FDMA507PZ | 功能描述:MOSFET 20V Single P Channel PowerTrench Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA510PZ | 功能描述:MOSFET -20V Single P-Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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