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參數資料
| 型號： | FDMB3800N_0610 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-Channel PowerTrench㈢ MOSFET 30V, 4.8A, 40mз |
| 中文描述： | 雙N溝道PowerTrench MOSFET的30V的㈢，4.8A，40mз |
| 文件頁數： | 1/7頁 |
| 文件大小： | 324K |
| 代理商： | FDMB3800N_0610 |
tm
October 2006
F
M
2006 Fairchild Semiconductor Corporation
FDMB3800N Rev. C1
www.fairchildsemi.com
1
FDMB3800N
Dual N-Channel PowerTrench
MOSFET
30V, 4.8A, 40m
Features
Max r
DS(on)
= 40m
at V
GS
= 10V, I
D
= 4.8A
Max r
DS(on)
= 51m
at V
GS
= 4.5V, I
D
= 4.3A
Fast switching speed
Low gate Charge
High performance trench technology for extremely low r
DS(on)
High power and current handling capability.
RoHS Compliant
General Description
These N-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
30
±20
4.8
9
1.6
0.75
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous T
A
= 25°C (Note 1a)
-Pulsed
Power Dissipation T
A
= 25°C Note 1a)
Power Dissipation T
A
= 25°C (Note 1b)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 1a)
80
°C/W
Thermal Resistance, Junction to Ambient (Note 1b)
165
Device Marking
3800
Device
FDMB3800N
Package
MicroFET3X1.9
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
MicroFET 3X1.9
8
1
7
2
3
4
6
5
Q2
Q1
D2
D2
D1
D1
G2
G1
S1
S2
相關PDF資料 |
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|---|---|
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| FDMB668P | P-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mohm |
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| FDMC2523P | P-Channel QFET -150V, -3A, 1.5ohm |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMB3900AN | 功能描述:MOSFET 25V Dual N-Chanenl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMB506P | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMB668P | 功能描述:MOSFET -20V P-Ch 1.8V Lgic Lvl PT MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC0205 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMC0222 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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