- 您現在的位置：買賣IC網 > PDF目錄375776 > FDMC2610 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel UltraFET Trench MOSFET(200V, 9.5A, 200mohm) PDF資料下載
參數資料
| 型號： | FDMC2610 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel UltraFET Trench MOSFET(200V, 9.5A, 200mohm) |
| 中文描述： | 2.2 A, 200 V, 0.397 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, MLP3.3X3.3, 8 PIN |
| 文件頁數： | 3/7頁 |
| 文件大小： | 273K |
| 代理商： | FDMC2610 |
F
M
FDMC2610 Rev.
B
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
0
1
2
3
0
5
10
15
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
=
4.5V
V
GS
= 7V
V
GS
= 5V
V
GS
= 6V
V
GS
=
10V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
3
6
9
12
15
0.8
1.0
1.2
1.4
1.6
1.8
V
GS
=
4.5V
N
D
I
D
, DRAIN CURRENT(A)
V
GS
= 7V
V
GS
=
6V
V
GS
=
5V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
-75
-50
-25
0
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
I
D
=2.2A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
7
8
9
10
100
200
300
400
500
600
T
A
= 25
o
C
T
A
= 150
o
C
I
D
= 1.4A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
r
D
,
S
(
m
)
2
3
4
5
6
0
3
6
9
12
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
20
相關PDF資料 |
PDF描述 |
|---|---|
| FDMC2674_07 | N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ |
| FDMC2674 | N-Channel UltraFET Trench MOSFET |
| FDMC3300NZA_07 | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 8A, 26mヘ |
| FDMC3300NZA | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench |
| FDMC5614P | P-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMC2610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 200V 9.5A POWER33-8 |
| FDMC2610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDMC2610_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET 200V, 9.5A, 200mヘ |
| FDMC2610_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench?? MOSFET 200V, 9.5A, 200m?? |
| FDMC2674 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。