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參數資料
| 型號： | FDMC3300NZA_07 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 8A, 26mヘ |
| 中文描述： | 單片共漏N溝道㈢為2.5V指定的PowerTrench MOSFET的20V的，8A條，26分ヘ |
| 文件頁數： | 1/6頁 |
| 文件大小： | 212K |
| 代理商： | FDMC3300NZA_07 |
tm
January 2007
F
M
2006 Fairchild Semiconductor Corporation
FDMC3300NZA Rev.C
www.fairchildsemi.com
1
FDMC3300NZA
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
MOSFET
20V, 8A, 26m
Ω
Features
Max r
DS(on)
= 26m
Ω
at V
GS
= 4.5V, I
D
= 8.0A
Max r
DS(on)
= 34m
Ω
at V
GS
= 2.5V, I
D
= 7.0A
>2000V ESD protection
Low Profile - 1mm maximum - in the new package MLP
3.3x3.3 mm
RoHS Compliant
General Description
This dual N-Channel MOSFET has been designed using
Fairchild Semiconductor's advanced PowerTrench
process to
optimize the r
DS(on)
@ V
GS
= 2.5V on special MLP lead frame
with all the drains on one side of the package.
Application
Li-lon Battery Pack
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Rating
20
±12
8
40
2.1
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
(Note 1a)
-Pulsed
Power Dissipation (Steady State) (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
T
J
, T
STG
W
°
C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
60
135
°C/W
Device Marking
3300A
Device
Package
Power 33
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
FDMC3300NZA
5
4
6
3
7
2
8
1
D1
D2
D2
D1
S1
G1
S2
G2
Power 33
D2
D2
D1
D1
G2
S2
G1
S1
4
3
2
1
5
6
7
8
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相關代理商/技術參數 |
參數描述 |
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| FDMC3612 | 功能描述:MOSFET 100V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC4435BZ | 功能描述:MOSFET -30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC4435BZ_F125 | 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC4435BZ_F126 | 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC4435BZ_F127 | 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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