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參數資料
| 型號： | FDMC3300NZA_07 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 8A, 26mヘ |
| 中文描述： | 單片共漏N溝道㈢為2.5V指定的PowerTrench MOSFET的20V的，8A條，26分ヘ |
| 文件頁數： | 3/6頁 |
| 文件大小： | 212K |
| 代理商： | FDMC3300NZA_07 |
F
M
FDMC3300NZA Rev.C
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
5
0
10
20
30
40
V
GS
= 4.0V
V
GS
= 3.5V
PULSE DURATION
= 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 4.5V
V
GS
=2.0V
V
GS
= 2.5V
V
GS
= 3.0V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
10
I
D
, DRAIN CURRENT(A)
20
30
40
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
GS
= 4.0V
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
V
GS
= 4.5V
V
GS
=3.0V
V
GS
= 2.5V
V
GS
= 2.0V
Normalized On-Resistance
Figure 3. Normalized On Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100
125
150
0.8
0.9
1.0
1.1
1.2
1.3
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
I
D
= 8.0A
V
GS
= 4.5V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
0
2
4
6
8
10
20
30
40
50
60
T
J
= 25
o
C
T
J
= 125
o
C
I
D
= 4.0A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
S
(
m
Ω
)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
10
20
30
40
V
DD
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
40
Source to Drain Diode
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