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參數資料
| 型號： | FDMC3300NZA_07 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 8A, 26mヘ |
| 中文描述： | 單片共漏N溝道㈢為2.5V指定的PowerTrench MOSFET的20V的，8A條，26分ヘ |
| 文件頁數： | 4/6頁 |
| 文件大小： | 212K |
| 代理商： | FDMC3300NZA_07 |
F
M
FDMC3300NZA Rev.C
www.fairchildsemi.com
4
Figure 7.
0
4
8
12
16
0
2
4
6
8
V
DD
= 10V
V
DD
= 15V
V
DD
= 5V
V
G
,
Q
g
, GATE CHARGE(nC)
I
D
= 8A
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
50
f =
1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
Capacitance vs Drain
to Source Voltage
Figure 9. Forward Bias Safe
Operating Area
0.1
1
10
0.01
0.1
1
10
100
1s
100us
1ms
10ms
100ms
10s
DC
D
,
V
DS
, DRAIN to SOURCE VOLTAGE (V)
r
DS(on)
LIMITED
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 135
T
A
= 25
O
C
o
C/W
60
Figure 10.
10
-4
10
-3
10
t, PULSE WIDTH (s)
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
V
GS
=10V
500
0.5
SINGLE PULSE
R
θ
JA
= 135
o
C/W
P
(
P
)
,
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
-----------------------
T
A
–
Single Pulse Maximum
Power Dissipation
Figure 11. Transient Thermal Response Curve
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1E-3
0.01
0.1
1
SINGLE PULSE
R
θ
JA
= 135
o
C/W
DUTY CYCLE-DESCENDING ORDER
N
I
θ
J
t, RECTANGULAR PULSE DURATION(s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
Typical Characteristics
T
J
= 25°C unless otherwise noted
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| FDMC4435BZ_F125 | 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC4435BZ_F126 | 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC4435BZ_F127 | 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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