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參數資料
| 型號： | FDMC2674 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel UltraFET Trench MOSFET |
| 中文描述： | 1 A, 220 V, 0.366 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3.30 X 3.30 MM, ROHS COMPLIANT, MLP-8 |
| 文件頁數： | 3/6頁 |
| 文件大小： | 303K |
| 代理商： | FDMC2674 |
F
FDMC2674 Rev. E
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1. On Region Characteristics
0.0
0.6
1.2
1.8
2.4
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 4.5V
V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 7V
V
GS
= 10V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized
Current and Gate Voltage
0.5
1.0
1.5
2.0
2.5
3.0
0.8
1.0
1.2
1.4
1.6
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
= 10V
V
GS
= 7V
V
GS
= 5.0V
V
GS
= 4.5V
On-Resistance vs Drain
Figure 3.
-80
-40
T
J
, JUNCTION TEMPERATURE
(
o
C
)
0
40
80
120
160
0.4
0.8
1.2
1.6
2.0
2.4
I
D
= 1A
V
GS
= 10V
N
Normalized On Resistance vs Junction
Temperature
Figure 4.
4
5
6
7
8
9
10
0.2
0.4
0.6
0.8
1.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
I
D
= 1A
r
D
,
S
(
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
2
3
4
5
6
0
1
2
3
4
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0
0.3
0.6
0.9
1.2
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward
Voltage vs Source Current
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMC2674 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDMC2674_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ |
| FDMC2674_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366m?? |
| FDMC3020DC | 功能描述:MOSFET 30V NChan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC3300NZA | 功能描述:MOSFET 20V 8A 26 OHM MONOLITHIC COMM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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