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參數資料
| 型號： | FDMF8700 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Driver plus FET Multi-chip Module |
| 中文描述： | HALF BRDG BASED MOSFET DRIVER, QCC56 |
| 封裝： | 8 X 8 MM, ROHS COMPLIANT, MO-220WLLD-5, SMD-56 |
| 文件頁數： | 10/13頁 |
| 文件大小： | 563K |
| 代理商： | FDMF8700 |
10
www.fairchildsemi.com
FDMF8700 Rev. C3
F
Typical Application
Application Information
Supply Capacitor Selection
For the supply input (VCIN) of the FDMF8700, a local ceramic
bypass capacitor is recommended to reduce the noise and to
supply the peak current. Use at least a 1μF, X7R or X5R capac-
itor. Keep this capacitor close to the FDMF8700 VCIN and
CGND pins.
Bootstrap Circuit
The bootstrap circuit uses a charge storage capacitor (C
BOOT
)
and the internal diode, as shown in Figure 26. Selection of
these components should be done after the high-side MOSFET
has been chosen. The required capacitance is determined
using the following equation:
where Q
G
is the total gate charge of the high-side MOSFET,
and
V
BOOT
is the voltage droop allowed on the high-side
MOSFET drive. For example, the Q
G
of the internal high-side
MOSFET is about 21nC @ 12V
GS
. For an allowed droop of
~300mV, the required bootstrap capacitance is > 100nF. A good
quality ceramic capacitor must be used.
The average diode forward current, I
F(AVG)
, can be estimated
by:
where f
SW
is the switching frequency of the controller. The peak
surge current rating of the internal diode should be checked
in-circuit, since this is dependent on the equivalent impedance
of the entire bootstrap circuit, including the PCB traces. For
applications requiring higher I
F
, an external diode may be used
in parallel to the internal diode.
Q
G
C
BOOT
>=
(1)
V
BOOT
I
F(AVG)
= Q
G
x f
SW
(2)
PWM
VIN
CGND
PGND
VCIN
BOOT
VSWH
VCIN 12V
VIN 12V
Signal
GND
LDRV
HDRV
FDMF8700
DISB
PWM
VIN
CGND
PGND
VCIN
BOOT
VSWH
LDRV
HDRV
FDMF8700
DISB
PWM
VIN
CGND
PGND
VCIN
BOOT
VSWH
LDRV
HDRV
FDMF8700
DISB
PWM
VIN
CGND
PGND
VCIN
BOOT
VSWH
LDRV
HDRV
FDMF8700
DISB
PWM3
PWM4
EN
PWM1
PWM2
LDRV
PWM
Controller
VCC
Power
GND
VOUT
Figure 26. Typical Application
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