- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375777 > FDMS2380 (FAIRCHILD SEMICONDUCTOR CORP) 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 2K; RAM: 192; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 250 (@8MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLSP0020JB-A (20P2F-A) PDF資料下載
參數(shù)資料
| 型號(hào)： | FDMS2380 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 外設(shè)及接口 |
| 英文描述： | 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 2K; RAM: 192; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 250 (@8MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLSP0020JB-A (20P2F-A) |
| 中文描述： | HALF BRIDGE BASED PRPHL DRVR, QCC18 |
| 封裝： | QFN-18 |
| 文件頁(yè)數(shù)： | 12/15頁(yè) |
| 文件大小： | 388K |
| 代理商： | FDMS2380 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)當(dāng)前第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)
F
FDMS2380 Rev. A
www.fairchildsemi.com
12
Figure 19. Output Leakage Current vs Case
Temperature
Figure 20. Supply Quiescent Current vs Case
Temperature
Typical Characteristics
(Continued) T
C
= 25°C unless otherwise noted
160
180
200
220
240
-40
0
40
80
120
160
I
L
,
μ
A
T
C
, CASE TEMPERATURE (
o
C)
V
= V
Single Channel
V
BATT
= V
OUT
= 18V
0
3
6
9
12
-40
0
40
80
120
160
I
S
,
T
C
, CASE TEMPERATURE (
o
C)
V
INA
= V
INB
= 0V
V
BATT
= V
OUT
= 13V
V
INA
= V
INB
= 5V
Typical Application Circuit
The following schematic of an FDMS2380 used in a basic application is just one of several possible variations for this device.
It shows two external and independent controllers, one for each channel, and two solenoids being controlled by the
FDMS2380. Furthermore, it shows the external local V
BATT
bypass capacitor, the details of which are discussed in the
Maximum Ratings section. The FDMS2380 ground pins GND1 and GND2 are fully isolated; therefore, they are normally
connected together on the PCB.
When designing the PCB for the FDMS2380 the user needs to provide as low a thermal impedance as is possible for both
the V
BATT
and OUT[1,2] paddles on the bottom of the package. The power density in the dual integrated solenoid driver can
be quite large and care should be taken to optimize the thermal impedance of the system to maximize the power handling
capability of the device while minimizing the maximum operating temperature.
L2
L1
INB1
DIAG2
INA1
DIAG1
INA2
INB2
V
batt
V
batt
FDMS2380
5 9 1,1 &
1 3 PadOu2
15
8
11
16
17
6
7
2
OUT1
OUT2
GND1
GND2
V
batt
4
V
batt
C
C
+5V
+5V
10K
10K
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDMS2572_07 | N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз |
| FDMS2572 | N-Channel UltraFET Trench MOSFET |
| FDMS2672 | N-Channel UltraFET Trench MOSFET 200V, 20A, 77mohm |
| FDMS2734 | N-Channel UltraFET Trench MOSFET 250V, 14A, 122mohm |
| FDMS3572_07 | N-Channel UltraFET Trench㈢ MOSFET 80V, 22A, 16.5mз |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMS2380_F085 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DRVR 2-OUT LO SIDE 18PIN PWR QFN EP - Tape and Reel |
| FDMS2380_F085A | 制造商:Fairchild Semiconductor Corporation 功能描述:60V,5A,DUAL INTEGRATED SOLENOID DRIVER - Tape and Reel |
| FDMS2380_SB82099 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DRVR 2-OUT LO SIDE 18PIN PWR QFN EP - Tape and Reel |
| FDMS2504SDC | 功能描述:MOSFET 25V N-Chan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS2506SDC | 功能描述:MOSFET 25V N-Chan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。