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參數資料
| 型號： | FDMS3572_07 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel UltraFET Trench㈢ MOSFET 80V, 22A, 16.5mз |
| 中文描述： | N溝道UltraFET海溝㈢MOSFET的80V的，22A條，16.5mз |
| 文件頁數： | 4/7頁 |
| 文件大小： | 525K |
| 代理商： | FDMS3572_07 |
F
M
FDMS3572 Rev.C1
www.fairchildsemi.com
4
Figure 7.
0
10
20
30
0
2
4
6
8
10
V
DD
= 50V
V
DD
= 30V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 40V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
100
1000
50
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
4000
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
t
AV
, TIME IN AVALANCHE(ms)
1
10
100
1
2
3
4
5
6
7
8
9
10
T
J
= 25
o
C
T
J
= 125
o
C
I
A
,
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Case Temperature
25
50
T
C
, CASE TEMPERATURE
(
75
100
125
150
0
10
20
30
40
50
Limited by Package
R
θ
JC
= 1.6
o
C/W
V
GS
= 6V
V
GS
= 10V
I
D
,
o
C
)
Maximum Continuous Drain
Figure 11. Forward Bias Safe
Operating Area
0.1
1
10
100
1E-3
0.01
0.1
1
10
1s
DC
10s
100ms
10ms
1ms
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
O
C
I
D
,
VDS, DRAIN to SOURCE VOLTAGE (V)
50
300
Figure 12.
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
1000
0.3
V
GS
= 10V
SINGLE PULSE
P
(
P
)
,
t, PULSE WIDTH (s)
2000
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
----------------------
T
A
–
Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關代理商/技術參數 |
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|---|---|
| FDMS3600S | 功能描述:MOSFET 25V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS3602S | 功能描述:MOSFET 25V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS3604AS | 功能描述:MOSFET 30V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS3606AS | 功能描述:MOSFET 30V Asymtrc Dual NCh PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS36101L_F085 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-Channel Power Trench MOSFET 100V, 38A, 26m |
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