- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375777 > FDMS8660AS (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench㈢ SyncFET 30V, 49A, 2.1mヘ PDF資料下載
參數(shù)資料
| 型號(hào)： | FDMS8660AS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ SyncFET 30V, 49A, 2.1mヘ |
| 中文描述： | 28 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, POWER 56, 8 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 242K |
| 代理商： | FDMS8660AS |
tm
October 2007
2007 Fairchild Semiconductor Corporation
FDMS8660AS Rev.C
www.fairchildsemi.com
1
F
T
FDMS8660AS
N-Channel PowerTrench
SyncFET
TM
30V, 49A, 2.1m
Features
Max r
DS(on)
= 2.1m
at V
GS
= 10V, I
D
= 28A
Max r
DS(on)
= 3.1m
at V
GS
= 4.5V, I
D
= 22A
Advanced Package and Silicon combination
for low r
DS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
RoHS Compliant
General Description
The FDMS8660AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
30
±20
49
179
28
200
726
104
2.5
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T
C
= 25°C
-Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Single Pulse Avalanche Energy (Note 2)
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
E
AS
mJ
P
D
W
T
J
, T
STG
°C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
1.2
50
°C/W
Device Marking
FDMS8660AS
Device
FDMS8660AS
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
4
3
2
1
5
6
7
8
G
S
S
S
Pin 1
Power 56 (Bottom view)
D
D
D
D
D
D
D
D
G
S
S
S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDMS8660S | N-Channel PowerTrench SyncFET (30V, 40A, 2.4mOHM) |
| FDMS8670AS | N-Channel PowerTrench㈢ SyncFET⑩ |
| FDMS8670S_07 | N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3.5mз |
| FDMS8670S | N-Channel PowerTrench SyncFETTM |
| FDMS8672AS | N-Channel PowerTrench㈢ SyncFET 30V, 28A, 5.0mヘ |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMS8660S | 功能描述:MOSFET 30V 40A 2.4 OHM NCH POWER T RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8660S_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench SyncFETTM |
| FDMS8662 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8670 | 功能描述:MOSFET 30V/20V N-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8670AS | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。