- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375777 > FDMS8660AS (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench㈢ SyncFET 30V, 49A, 2.1mヘ PDF資料下載
參數(shù)資料
| 型號(hào)： | FDMS8660AS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ SyncFET 30V, 49A, 2.1mヘ |
| 中文描述： | 28 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, POWER 56, 8 PIN |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大小： | 242K |
| 代理商： | FDMS8660AS |
F
T
www.fairchildsemi.com
6
2007 Fairchild Semiconductor Corporation
FDMS8660AS Rev.C
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8660AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0
5
10
15
20
25
30
0.00001
0.0001
0.001
0.01
0.1
T
J
= 125
o
C
T
J
= 100
o
C
T
J
= 25
o
C
I
D
,
V
, REVERSE VOLTAGE (V)
Typical Characteristics
(continued)
Figure 14. FDMS8660AS SyncFET Body Diode
Reverse Recovery Characteristics
Figure 15. SyncFET Body Diode Reverse Leakage
vs Drain to Source Voltage
-20
0
20
40
60
80
100
120
-4
-3
-2
-1
0
1
2
3
4
5
C
TIME (ns)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDMS8660S | N-Channel PowerTrench SyncFET (30V, 40A, 2.4mOHM) |
| FDMS8670AS | N-Channel PowerTrench㈢ SyncFET⑩ |
| FDMS8670S_07 | N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3.5mз |
| FDMS8670S | N-Channel PowerTrench SyncFETTM |
| FDMS8672AS | N-Channel PowerTrench㈢ SyncFET 30V, 28A, 5.0mヘ |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMS8660S | 功能描述:MOSFET 30V 40A 2.4 OHM NCH POWER T RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8660S_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench SyncFETTM |
| FDMS8662 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8670 | 功能描述:MOSFET 30V/20V N-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8670AS | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。