- 您現在的位置：買賣IC網 > PDF目錄375777 > FDMS5672 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mohm PDF資料下載
參數資料
| 型號： | FDMS5672 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mohm |
| 中文描述： | 10.6 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 8 PIN |
| 文件頁數： | 2/7頁 |
| 文件大小： | 527K |
| 代理商： | FDMS5672 |
F
M
FDMS5672 Rev.C1
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
60
V
I
D
= 250
μ
A, referenced to 25°C
59
mV/°
C
V
DS
= 48V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
1
μ
A
nA
±100
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
2
3.2
4
V
I
D
= 250
μ
A, referenced to 25°C
-11
mV/°C
r
DS(on)
Drain to Source On Resistance
V
GS
= 10V, I
D
= 10.6A
V
GS
= 6V, I
D
= 8A
V
GS
= 10V, I
D
= 10.6A,
T
J
= 125°C
V
DS
= 10V, I
D
= 10.6A
9.4
13.0
11.5
16.5
m
15.0
18.0
g
FS
Forward Transconductance
26
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
2100
375
120
1.2
2800
500
180
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= 30V, I
D
= 10.6A
V
GS
= 10V, R
GEN
= 6
16
17
22
8
32
10
8.3
29
31
35
16
45
ns
ns
ns
ns
nC
nC
nC
V
GS
= 0V to 10V V
DD
= 30V
I
D
= 10.6A
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 10.6A (Note 2)
0.80
35
42
1.20
53
63
V
ns
nC
I
F
= 10.6A, di/dt = 100A/
μ
s
Notes:
1:
R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5
x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while
R
θ
CA
is determined by
the user's board design.
2:
Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
a. 50°C/W when mounted on
a 1 in
pad of 2 oz copper
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
相關PDF資料 |
PDF描述 |
|---|---|
| FDMS8660AS | N-Channel PowerTrench㈢ SyncFET 30V, 49A, 2.1mヘ |
| FDMS8660S | N-Channel PowerTrench SyncFET (30V, 40A, 2.4mOHM) |
| FDMS8670AS | N-Channel PowerTrench㈢ SyncFET⑩ |
| FDMS8670S_07 | N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3.5mз |
| FDMS8670S | N-Channel PowerTrench SyncFETTM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMS5672_0712 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET |
| FDMS6673BZ | 功能描述:MOSFET -30V 28A P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS6681Z | 功能描述:MOSFET -30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS6682Z | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMS7556S | 功能描述:MOSFET 25V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。