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參數資料
型號: FDMS8670AS
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench㈢ SyncFET⑩
中文描述: 23 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN
文件頁數: 4/7頁
文件大小: 224K
代理商: FDMS8670AS
F
T
www.fairchildsemi.com
4
2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
Figure 7.
0
10
20
30
40
0
2
4
6
8
10
I
D
= 23A
V
DD
= 15V
V
DD
= 10V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 20V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
30
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
5000
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
1
10
100
1
10
600
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
A
,
40
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Case Temperature
25
50
75
100
125
150
0
20
40
60
80
100
120
140
R
θ
JC
= 1.6
o
C/W
V
GS
= 10V
V
GS
= 4.5V
I
D
,
D
T
C
,
CASE TEMPERATURE
(
o
C
)
Limited by Package
Maximum Continuous Drain
Figure 11. Forward Bias Safe
Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
100
μ
s
DC
10s
1s
100ms
10ms
1ms
D
,
V
DS
, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
300
Figure 12.
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
1000
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
0.5
V
GS
= 10V
P
(
P
)
,
P
t, PULSE WIDTH (s)
2000
Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關代理商/技術參數
參數描述
FDMS8670AS_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3.0mヘ
FDMS8670S 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8670S_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3.5mз
FDMS8670S_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ SyncFET TM
FDMS8672AS 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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