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參數資料
| 型號： | FDMS8670S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench SyncFETTM |
| 中文描述： | 20 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 237K |
| 代理商： | FDMS8670S |
F
S
T
FDMS8670S Rev.C1
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
0
1
2
3
4
0
30
60
90
120
150
180
V
GS
=
4V
V
GS
=
4.5V
V
GS
=
3V
V
GS
=
3.5V
V
GS
=
10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
I
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
30
60
90
120
150
180
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 3V
V
GS
= 10V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
, DRAIN CURRENT(A)
-75
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 20A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
3
4
5
6
7
8
9
10
2
4
6
8
10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= 20A
r
D
,
S
(
m
Ω
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
1
2
3
4
0
30
60
90
120
150
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
20
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMS8670S_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3.5mз |
| FDMS8670S_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ SyncFET TM |
| FDMS8672AS | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8672S | 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8674 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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