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參數資料
| 型號： | FDMS8672S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench SyncFET 30V, 35A, 5mohm |
| 中文描述： | 17 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA |
| 封裝： | ROHS COMPLIANT, POWER 56, 8 PIN |
| 文件頁數： | 6/8頁 |
| 文件大小： | 392K |
| 代理商： | FDMS8672S |
F
S
T
FDMS8672S Rev.C1
www.fairchildsemi.com
6
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS8672S.
TIME: 12.5nS/Div
C
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Typical Characteristics
(continued)
Figure 14. FDMS8672S SyncFET Body Diode
Reverse Recovery Characteristics
Figure 15. SyncFET Body Diode Reverse
Leakage vs Drain to Source Voltage
0
5
10
15
20
25
30
1E-5
1E-4
1E-3
0.01
0.1
T
J
= 100
o
C
T
J
= 125
o
C
T
J
= 25
o
C
V
DS
, REVERSE VOLTAGE (V)
I
D
,
相關PDF資料 |
PDF描述 |
|---|---|
| FDMS8674 | Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 150; rf (ohm) max: 2.5typ 1.5; Condition IF at rf (mA): 2.0 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.31; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP |
| FDMS8680 | N-Channel PowerTrench㈢ MOSFET 30V, 35A, 7.0mヘ |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMS8674 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8674_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 21A, 5.0mヘ |
| FDMS8680 | 功能描述:MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8690 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8690_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз |
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