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參數資料
| 型號： | FDMS8692 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET |
| 中文描述： | 12 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN |
| 文件頁數： | 4/6頁 |
| 文件大小： | 211K |
| 代理商： | FDMS8692 |
F
www.fairchildsemi.com
4
2007 Fairchild Semiconductor Corporation
FDMS8692 Rev.C
Figure 7.
0
4
8
12
16
0
2
4
6
8
10
I
D
= 12A
V
DD
= 15V
V
DD
= 10V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 20V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
30
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
50
2000
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
t
AV
, TIME IN AVALANCHE(ms)
1
10
100
1
10
T
J
= 25
o
C
T
J
= 125
o
C
I
A
,
20
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Case Temperature
25
50
75
100
125
150
0
10
20
30
40
50
R
θ
JC
= 3
o
C/W
V
GS
= 10V
V
GS
= 4.5V
I
D
,
D
T
C
,
CASE TEMPERATURE
(
o
C
)
Limited by Package
Maximum Continuous Drain
Figure 11. Forward Bias Safe
Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
DC
10s
1s
100ms
10ms
1ms
D
,
V
DS
, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
Figure 12.
10
-3
10
-2
10
t, PULSE WIDTH (s)
-1
10
0
10
1
10
2
10
3
1
10
100
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
0.5
V
GS
= 10V
P
(
P
)
,
P
200
Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關代理商/技術參數 |
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|---|---|
| FDMS8820 | 功能描述:MOSFET NCh 30V 116A 2.4mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8848NZ | 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8860AS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMS8880 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8888 | 功能描述:MOSFET N-Channel PwrTrench 30V 21A 9.5mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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