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參數資料
| 型號： | FDN335N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 中文描述： | 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 210K |
| 代理商： | FDN335N |
F
FDN335N Rev. C
Typical Characteristics
0
2
4
6
8
10
0
1
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 1.7A
V
GS
= 4.5V
0
0.04
0.08
0.12
0.16
0.2
0.24
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 0.85A
T
A
= 125
o
C
T
A
= 25
o
C
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
V
GS
= 4.5V
3.0V
2.5V
2.0V
1.5V
3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
2
4
6
8
10
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 2.0V
2.5V
4.0V
3.5V
4.5V
3.0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
相關PDF資料 |
PDF描述 |
|---|---|
| FDN336 | Single P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDN336P | Single P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDN337N | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN338 | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN338P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDN335N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN335N_NL | 功能描述:MOSFET N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN335N_Q | 功能描述:MOSFET SSOT-3 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN335N-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN335N Series 20 V 0.07 Ohm N-Channel 2.5V Specified PowerTrench Mosfet SSOT-3 |
| FDN336 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single P-Channel 2.5V Specified PowerTrenchTM MOSFET |
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