- 您現在的位置：買賣IC網 > PDF目錄375778 > FDN352AP (FAIRCHILD SEMICONDUCTOR CORP) Single P-Channel, PowerTrench PDF資料下載
參數資料
| 型號： | FDN352AP |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single P-Channel, PowerTrench |
| 中文描述： | 1300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3, 3 PIN |
| 文件頁數： | 4/5頁 |
| 文件大小： | 118K |
| 代理商： | FDN352AP |
4
www.fairchildsemi.com
FDN352AP Rev. C
F
Typical Characteristics
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
0
2
4
6
8
10
0
0.5
1
Q
g
, GATE CHARGE (nC)
1.5
2
2.5
3
-
G
,
I
D
= -0.9A
V
DS
= -10V
-20V
-15V
0
50
100
150
200
0
5
10
15
20
25
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
JA
= 270
o
C/W
T
A
= 25
o
C
10ms
1ms
100
μ
s
0
0.0001
10
20
30
40
50
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
P
SINGLE PULSE
R
JA
= 270
°
C/W
T
A
= 25
°
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
θ
θ
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 270
°
C/W
T
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
相關PDF資料 |
PDF描述 |
|---|---|
| FDN357N | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN358 | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN358P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN359BN | N-Channel Logic Level PowerTrench TM MOSFET |
| FDN359 | N-Channel Logic Level PowerTrenchTM MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDN352AP_0508 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single P-Channel, PowerTrench MOSFET |
| FDN352AP-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN352AP Series 30 V 180 mOhm Single P-Channel PowerTrench Mosfet SSOT-3 |
| FDN357N | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN357N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN357N | 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-CH. FET 60 MO SSOT3 |
發布緊急采購，3分鐘左右您將得到回復。