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參數資料
| 型號： | FDN361AN |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel, Logic Level, PowerTrenchビヌ |
| 中文描述： | 1800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數： | 4/8頁 |
| 文件大小： | 946K |
| 代理商： | FDN361AN |
F
FDN361AN, Rev. C
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Typical Characteristics
(continued)
0
1
2
3
4
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
I = 1.8A
V = 5V
10V
15V
0.1
0.2
0.5
1
2
5
10
30
10
20
50
100
200
500
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0 V
C ss
C s
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20 30
50
0.01
0.03
0.1
0.3
1
3
10
30
I
D
RDS(ON LIMIT
V = 10V
SINGLE PULSE
R =270
°
C/W
T = 25
°
C
DC
1s
10ms
100ms
1ms
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
00
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
100 300
10
20
30
40
50
P
SINGLE PULSE
R =270
°
C/W
T = 25
°
C
θ
JA
0.0001
0.001
001
0.1
t , TIME (s ec)
1
10
100
300
0.001
0.002
0.005
001
002
005
0.1
0.2
0.5
1
T
R (t) = r(t) * R
R = 270
°
C/W
T - T = P * R J A
D u t y C y c le, D = t / t
P(pk)
t
1
t
2
r
S n g l e P ul s e
D = 05
01
0.05
0.02
0.01
02
2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDN361AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN361AN | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistors MOSFET RoHS Compliant:Yes |
| FDN361BN | 功能描述:MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN363N | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDN371N | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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