欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FDP16AN08A0
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET 75V, 58A, 16mз
中文描述: 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數: 7/11頁
文件大小: 267K
代理商: FDP16AN08A0
2002 Fairchild Semiconductor Corporation
FDP16AN08A0 / FDB16AN08A0 Rev. A1
F
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, T
JM
, and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, P
DM
, in an
application.
Therefore
temperature, T
A
(
o
C), and thermal resistance R
θ
JA
(
o
C/W)
must be reviewed to ensure that T
JM
is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
the
application
s
ambient
In using surface mount devices such as the TO-263
package, the environment in which it is applied will have a
significant influence on the part
s current and maximum
power dissipation ratings. Precise determination of P
DM
is
complex and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild provides thermal information to assist the
designer
s preliminary application evaluation. Figure 21
defines the R
θ
JA
for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction
temperature
or
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
power
dissipation.
Pulse
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
(EQ. 1)
PDM
θ
JA
(
-----------------------------
)
=
Area in Iches Squared
(EQ. 2)
R
θ
JA
26.51
+
0.262
Area
(
)
-----------19.84
+
=
(EQ. 3)
R
θ
JA
26.51
+
1.69
Area
(
)
-----------128
+
=
Area in Centimeters Squared
Figure 21. Thermal Resistance vs Mounting
Pad Area
20
40
60
80
1
10
0.1
R
θ
JA
= 26.51+ 19.84/(0.262+Area) EQ.2
R
θ
J
(
o
C
AREA, TOP COPPER AREA in
2
(cm
2
)
(0.645)
(6.45)
(64.5)
R
θ
JA
= 26.51+ 128/(1.69+Area) EQ.3
相關PDF資料
PDF描述
FDB16AN08A0 N-Channel PowerTrench MOSFET 75V, 58A, 16mз
FDP16N50 500V N-Channel MOSFET
FDPF16N50 500V N-Channel MOSFET
FDP18N50 500V N-Channel MOSFET
FDPF18N50 500V N-Channel MOSFET
相關代理商/技術參數
參數描述
FDP16G 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE
FDP16N50 功能描述:MOSFET 500V 16A NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP16N50_0704 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FDP16N50_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FDP16N50U 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UniFETTM Ultra FRFET MOSFET
主站蜘蛛池模板: 图木舒克市| 达州市| 盈江县| 晋州市| 永福县| 邳州市| 乌拉特中旗| 南宁市| 武邑县| 南木林县| 麻栗坡县| 交口县| 沙河市| 定西市| 枝江市| 柳江县| 延川县| 云龙县| 梅河口市| 洛南县| 北安市| 剑阁县| 嵊州市| 台湾省| 迁安市| 兖州市| 璧山县| 正安县| 广汉市| 凤庆县| 丰镇市| 微博| 根河市| 双柏县| 蒙城县| 安徽省| 栾城县| 永顺县| 陈巴尔虎旗| 铜鼓县| 巴楚县|