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參數資料
| 型號： | FDP24AN06LA0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 60V, 36A, 24mohm |
| 中文描述： | 36 A, 60 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 1/11頁 |
| 文件大小： | 248K |
| 代理商： | FDP24AN06LA0 |
2004 Fairchild Semiconductor Corporation
January 2004
FDB24AN06LA0 / FDP24AN06LA0 Rev. A
F
FDB24AN06LA0 / FDP24AN06LA0
N-Channel PowerTrench
MOSFET
60V, 36A, 24m
Features
r
DS(ON)
= 20m
(Typ.), V
GS
= 5V, I
D
= 36A
Q
g
(tot) = 16nC (Typ.), V
GS
= 5V
Low Miller Charge
Low Q
RR
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 83547
Applications
Motor / Body Load Control
ABS Systems
Powertrain Management
Injection Systems
DC-DC converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 12V and 24V systems
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certificatio
n.
Symbol
V
DSS
V
GS
Parameter
Ratings
60
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25
o
C, V
GS
= 5V)
Continuous (T
C
= 100
o
C, V
GS
= 5V)
Continuous (T
A
= 25
o
C, V
GS
= 5V, R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
40
36
25
7.8
A
A
A
A
A
Figure 4
36
75
0.5
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-220, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
2.0
62
43
o
C/W
o
C/W
o
C/W
D
G
S
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
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